SEMICONDUCTOR DEVICE WITH A PROGRAMMABLE CONTACT A

作者：HUANG CHIN-LING

申请者：NANYA TECHNOLOGY CORP.

发明人：HUANG CHIN-LING 年：2022,

语种：英语

公开国家：TW 国家：中国台湾

专利申请号：TW109139954 专利申请日期：2020-11-16

公开(公告)号：TWI756921B 公开日期：2022-03-01

优先权号：US202016734869 | 2020US-16734869

分类号：H01L 21/28 20060101ALI20220301VHTW 国际主分类号：H01L 21/28 20060101ALI20220301VHTW 国际分类号：H01L-21/28 | H01L-29/423 | H01L-29/49 | H01L-29/51 CPC分类号：H01L-029/78 | H01L-029/4232 | H01L-029/66477 | H01L-029/7833 | H01L-027/11206 | H01L-027/0207 | H01L-023/5256 | H01L-023/5226 | H01L-023/53276 | H01L-2221/1094 | H01L-023/485 | H01L-029/42376 | H01L-029/4011 | H01L-029/518 | H01L-029/4933 | H01L-029/42364 | H01L-029/41725 | H01L-021/823418 | H01L-2924/1304 | H01L-021/823814 | H01L-027/092 | H01L-029/42316 | H01L-029/41791

法律状态：GRANTED

摘要： 本揭露提供一種具有可程式化接觸點的半導體元件及其製備方法。該半導體元件包括一基底;一閘極堆疊，位在該基底上;複數個可程式化接觸點，位在該閘極堆疊上;一對重度摻雜區，位在鄰近該閘極堆疊的兩側處，並位在該基底中;以及複數個**接觸點，位在該對重度摻雜區上。該複數個可程式化接觸點的一寬度小於該複數個**接觸點的一寬度。 | The present disclosure provides a semiconductor component having programmable contact points and a method of making the same. The semiconductor element includes a substrate, a gate stack located on the substrate, a plurality of programmable contacts located on the gate stack, a pair of heavily doped regions located adjacent both sides of the gate stack and located in the substrate, and a plurality of first contacts located on the pair of heavily doped regions. A width of the plurality of programmable contacts is less than a width of the plurality of first contacts.